Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors
نویسندگان
چکیده
منابع مشابه
Low-noise Brillouin laser on a chip at 1064 nm.
We demonstrate narrow-linewidth-stimulated Brillouin lasers at 1064 nm from ultra-high-Q silica wedge disk resonators on silicon. Fundamental Schawlow-Townes frequency noise of the laser is on the order of 0.1 Hz2/Hz. The technical noise spectrum of the on-chip Brillouin laser is close to the thermodynamic noise limit of the resonator (thermorefractive noise) and is comparable to that of ultra-...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.001028